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| www..com Pb Free Plating Product ISSUED DATE :2006/08/16 REVISED DATE : GJ35N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 13.5m 36A The GJ35N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : 2 Ratings 25 20 36 25 150 50 0.4 150 25 -55 ~ +150 Unit V V A A A W W/ : mJ A : Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy EAS IAS Tj, Tstg Single Pulse Avalanche Current Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient GJ35N03 Max. Max. Symbol Rthj-c Rthj-a Value 2.5 110 Unit : /W : /W Page: 1/4 ISSUED DATE :2006/08/16 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 25 1.0 - Typ. 0.037 26 7 13 18.4 3.57 2.9 11.7 3.87 32.1 5.4 1176 268 142 Max. 3.0 100 1 25 13.5 20 - Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=18A VGS= 20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=30A VGS=4.5V, ID=30A ID=18A VDS=20V VGS=5V VDS=15V ID=18A VGS=10V RG=3.3 RD=0.83 VGS=0V VDS=25V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance3 Total Gate Charge3 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF Source-Drain Diode Parameter Forward On Voltage 3 Symbol VSD IS Min. - Typ. - Max. 1.5 50 Unit V A Test Conditions IS=20A, VGS=0V, Tj=25 : VD= VG=0V, VS=1.5V Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 : , VDD=20V, L=0.1mH, RG=25 , IAS=10A. 3. Pulse width 300us, duty cycle 2%. GJ35N03 Page: 2/4 ISSUED DATE :2006/08/16 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics 15 Fig 2. Typical Output Characteristics 14 13 12 11 10 9 8 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GJ35N03 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2006/08/16 REVISED DATE : 18A Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ35N03 Page: 4/4 |
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